FBE-ASIC GmbH

IMS Gate Forest®

The IMS Gate Forest® line of mixed-signal gate arrays offers the integration of analog and digital functionality on a single chip, focusing on higher logic integration needs. Various sizes allow for the well-matched integration of different complexities. Typical application fields for the IMS Gate Forest® gate arrays are signal amplification, signal digitization, digital signal processing, or control tasks, wherein higher digital processing power is required.

The IMS Gate Forest® arrays are manufactured in a 0.8um CMOS process, allowing for a large integration density. Customization of the array is achieved by patterning two metal layers as well as the contact and via layer.

Very fast prototyping times are achieved by electron beam direct writing of single wafers, also reducing the NRE costs for small quantities.

Your competitive edge with IMS Gate Forest®

Low NRE cost (no masks needed for small quantities)
Very rapid prototyping through direct electron-beam writing (2.5 weeks for first ceramic samples)
Available in small, medium and large quantities (one wafer minimum order)
No deadlines as with MPW (multiple-project-wafers)
Short design times; library of digital modules available
Cost saving by delivery of VHDL description for digital functionality
Low risk approach (components have to be connected "only", last-minute enhancements possible through unused components)

Application fields

(Sensor) signal amplification
Signal digitization
Embedded systems (sensors + microcontroller)
Telecommunication
Automation & control

IMS Gate Forest® Info Sheet (pdf, 300kB)